2026-02-112026-02-11https://dspace.bibliolatino.com/handle/123456789/902In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.Agencia Nacional de Investigación e Innovaciónapplication/pdfapplication/pdfCircuitos integradosTopologíaTransistoresEstándaresEspejos de corrienteinfo:eu-repo/semantics/article