A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor

Vista sencilla de ítem
dc.creatorCosta, Diego
dc.creatorMíguez, Matías
dc.creatorGak Szollosy, Joel
dc.creatorArnaud Maceira, Alfredo
dc.date2022-09-01T21:52:03Z
dc.date2022-09-01T21:52:03Z
dc.date2020
dc.date.accessioned2026-02-11T17:04:46Z
dc.date.available2026-02-11T17:04:46Z
dc.descriptionIn this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.
dc.descriptionAgencia Nacional de Investigación e Innovación
dc.formatapplication/pdf
dc.formatapplication/pdf
dc.identifierhttps://hdl.handle.net/10895/1786
dc.identifier.urihttps://dspace.bibliolatino.com/handle/123456789/902
dc.languageeng
dc.publisherIEEE
dc.relationArgentine Conference on Electronics (CAE), 2020
dc.subjectCircuitos integrados
dc.subjectTopología
dc.subjectTransistores
dc.subjectEstándares
dc.subjectEspejos de corriente
dc.titleA Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor
dc.typeinfo:eu-repo/semantics/article

Archivos

Colecciones

Coleccion Liberi