An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

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dc.creatorArnaud Maceira, Alfredo
dc.creatorChacón Rodríguez, Alfonso
dc.creatorMiguez de Mori, Matías Rafael
dc.creatorGak Szollosy, Joel
dc.creatorPuyol, Rafael
dc.date2021-10-21T20:52:17Z
dc.date2021-10-21T20:52:17Z
dc.date2019
dc.date.accessioned2026-02-11T17:11:51Z
dc.date.available2026-02-11T17:11:51Z
dc.descriptionIn this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.
dc.descriptionAgencia Nacional de Investigación e Innovación
dc.formatapplication/pdf
dc.formatapplication/pdf
dc.identifierhttps://hdl.handle.net/10895/1552
dc.identifier.urihttps://dspace.bibliolatino.com/handle/123456789/2510
dc.languageeng
dc.publisherIEEE
dc.relation10th IEEE Latin American Symposium on Circuits & Systems (LASCAS), 2019.
dc.rightsLicencia Creative Commons Atribución – No Comercial – Sin Derivadas (CC BY-NC-ND 4.0)
dc.subjectAnalog integrated circuits
dc.subjectCMOS
dc.subjectLinearization techniques
dc.subjectAnalog filters
dc.subjectMOS resistor
dc.titleAn asymmetrical bulk-modified composite MOS transistor with enhanced linearity
dc.typeinfo:eu-repo/semantics/article

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